Samsung Announces Mass Production of 1Tb QLC 9th-Generation V-NAND
Samsung Electronics has announced the commencement of mass production for its 1Tb quad-level cell (QLC) 9th-generation V-NAND, marking a significant milestone in the storage industry. This development positions Samsung at the forefront of high-capacity storage innovation, following the earlier production of its triple-level cell (TLC) 9th-generation V-NAND earlier this year. The emergence of this technology signifies a broader industry move from TLC to QLC, catering to the escalating demand for storage solutions that are both higher in capacity and more efficient.
The newly developed QLC V-NAND integrates advanced technologies, such as Channel Hole Etching, which enables a higher layer count through a double-stack structure. This advancement results in an approximate 86% increase in bit density compared to the previous generation of QLC V-NAND. As a result, the new technology can offer significantly greater storage capacity within the same physical footprint, a critical feature for applications requiring substantial amounts of data storage.
Samsung's latest V-NAND utilises Designed Mold, Predictive Program, and Low-Power Design technologies to enhance its performance and efficiency. These technologies collectively boost reliability by 20%, double the write performance, improve input/output speed by 60%, and cut power consumption during read and write operations by up to 50%.
Evolution in Storage Technology
The industry-wide transition from TLC to QLC NAND flash memory is driven by the necessity for larger storage capacities and improved cost efficiencies. QLC NAND is capable of storing four bits per cell as opposed to TLC's three bits, thereby increasing the storage density. This shift allows manufacturers to produce SSDs with higher capacities at lower costs, catering particularly to data centres and artificial intelligence (AI) applications that require extensive storage capabilities.
"Kicking off the successful mass production of QLC 9th-generation V-NAND just four months after the TLC version allows us to offer a full lineup of advanced SSD solutions that address the needs for the AI era," stated SungHoi Hur, Executive Vice President and Head of Flash Product & Technology at Samsung Electronics. "As the enterprise SSD market experiences rapid growth with increased demand for AI applications, we will continue to solidify our leadership in the segment through our QLC and TLC 9th-generation V-NAND."
Initially, the QLC V-NAND will be utilised in branded consumer products before extending to mobile Universal Flash Storage (UFS), personal computers, and server SSDs for clients including cloud service providers.
Samsung Unveils 990 Evo Plus SSD
In related news, Samsung recently launched its 990 Evo Plus SSD, an enhancement over the 990 Evo SSD released earlier this year. The 990 Evo Plus claims to offer 50% faster performance than its predecessor, making it well-suited for gaming, business, and creative applications.
The 990 Evo Plus employs Samsung's 8th generation V-NAND technology and delivers a maximum sequential read speed of 7,250MB/s for its 4TB model, with write speeds reaching up to 6,300 MB/s. The SSD includes a nickel-coated heat shield to mitigate overheating and boasts a 73% improvement in efficiency. The random read and write speeds are reported at 1,050K IOPS and 1,400K IOPS, respectively.
Available in 1TB, 2TB, and 4TB models, the 990 Evo Plus is equipped with Samsung Magician Software and offers AES-256-bit full disk encryption. The drives are set to be available this autumn from select retailers and Samsung's official website, with the 1TB model priced at $110, the 2TB model at $185, and the 4TB model retailing for $345.
These developments highlight Samsung's ongoing commitment to advancing storage technology and meeting the growing demands of both consumer and enterprise markets.
Source: Noah Wire Services