Navitas Semiconductor has unveiled the first-ever 8.5 kW power supply unit (PSU) specifically designed for AI and hyperscale data centres. This groundbreaking PSU utilises advanced Gallium Nitride (GaN) and Silicon Carbide (SiC) technologies, which contribute to an impressive 98% efficiency.
This new PSU generates a 54V output and is optimised for AI applications. It adheres to the Open Compute Project (OCP) and Open Rack v3 (ORv3) specifications, highlighting its compliance with industry standards for next-generation computing environments. Central to its design are high-power GaNSafe and Gen-3 Fast SiC MOSFETs. These are organised in 3-phase interleaved power factor correction (PFC) and LLC resonant converter topologies, which ensure optimal efficiency and performance while minimising the number of components used.
A notable feature of this PSU is its lower transient current and electromagnetic interference (EMI), achieved by switching to a 3-phase topology for both PFC and LLC operations compared to the 2-phase topologies used by other products in the market. Beyond performance enhancements, this design shift also facilitates a reduction in the overall cost by 25%, cutting down the number of GaN and SiC devices relative to its closest competitors.
Additional specifications of the PSU include a standby output voltage of 12V, an input voltage range of 180 to 264 Vac, and an operational temperature range extending from -5 to 45 degrees Celsius. It presents a hold-up time of 10 milliseconds at the full capacity of 8.5 kW, with a potential extension to 20 milliseconds using an extender.
The GaNSafe technology is integral to the PSU's performance, specifically engineered for high-demand, high-power settings like AI data centres and industrial markets. This fourth-generation development by Navitas incorporates control, propulsion, sensing, and essential protection features, offering reliability and robustness. GaNSafe is recognised for being the most secure GaN technology globally, fortified with protections such as a 350 nanosecond maximum latency short-circuit protection, 2kV ESD protection across all pins, elimination of negative gate drive, and programmable slew rate control. These are packaged in a discrete GaN FET format, simplifying design by operating with just four pins and removing the need for a VCC pin.
Additionally, the 3-Phase interleaved constant current mode (CCM) through-planes PFC technology is powered by Gen-3 Fast SiC MOSFETs, featuring 'trench-assisted planar' technology. This development benefits from over two decades of SiC innovation leadership, providing superior thermal performance, fast switching capabilities, and strong durability. This is instrumental in supporting emerging needs such as faster electric vehicle charging and significantly more powerful AI data centres.
The cutting-edge PSU will make its debut public display at electronica 2024, scheduled to occur from November 12th to 15th, at Hall C3, booth 129. This event will provide the technology and electronics community with their first glimpse of Navitas Semiconductor's latest innovations in PSU technology.
Source: Noah Wire Services